HER154G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1.5A DO204AC

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Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1.5A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	HER154G

Capacitance @ Vr, F	35 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AC
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation HER154G	Axial DO-15 DO-204AC	1 V	1.5 A	200 mA 500 ns	5 µA	50 ns	DO-204AC	DO-15	300 V	Standard	Through Hole	35 pF	150 °C	-55 °C

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General part information

Diode 300 V 1.5A Through Hole DO-204AC (DO-15)

Technical documentation and resources