R6009ENJTL
ActiveRohm Semiconductor
600V 9A TO-263, LOW-NOISE POWER MOSFET
R6009ENJTL
ActiveRohm Semiconductor
600V 9A TO-263, LOW-NOISE POWER MOSFET
Description
General part information
Super Junction-MOS EN Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6009ENJTL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Input Capacitance (Ciss) (Max) | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | LPTS |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) | 535 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Technical Data Sheet EN
Importance of Probe Calibration When Measuring Power: Deskew
Basics of Thermal Resistance and Heat Dissipation
Report of SVHC under REACH Regulation
Judgment Criteria of Thermal Evaluation
Condition of Soldering / Land Pattern Reference
Precautions When Measuring the Rear of the Package with a Thermocouple
Explanation for Marking
Taping Information
θ<sub>JA</sub> and Ψ<sub>JT</sub>
What Is Thermal Design
Method for Monitoring Switching Waveform
MOSFET Gate Resistor Setting for Motor Driving
How to Create Symbols for PSpice Models
How to Use the Thermal Resistance and Thermal Characteristics Parameters
ESD Data
Reliability Test Result
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
MOSFET Gate Drive Current Setting for Motor Driving
Measurement Method and Usage of Thermal Resistance RthJC
Compliance of the RoHS directive
Anti-Whisker formation - Transistors
How to Use LTspice® Models: Tips for Improving Convergence
Package Dimensions
Notes for Calculating Power Consumption:Static Operation
Moisture Sensitivity Level - Transistors
List of Transistor Package Thermal Resistance
Part Explanation
About Export Regulations
About Flammability of Materials
PCB Layout Thermal Design Guide
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Two-Resistor Model for Thermal Simulation
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Types and Features of Transistors
Notes for Temperature Measurement Using Thermocouples
Temperature derating method for Safe Operating Area (SOA)
Impedance Characteristics of Bypass Capacitor
Calculation of Power Dissipation in Switching Circuit
Inner Structure
Notes for Temperature Measurement Using Forward Voltage of PN Junction
How to Use LTspice® Models
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
What is a Thermal Model? (Transistor)
