IPB110P06LMATMA1
ActiveOPTIMOS™ P-CHANNEL POWER MOSFET -60 V ; D2PAK TO-263 PACKAGE; 11 MOHM;
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IPB110P06LMATMA1
ActiveOPTIMOS™ P-CHANNEL POWER MOSFET -60 V ; D2PAK TO-263 PACKAGE; 11 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB110P06LMATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 281 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs [Max] | 11 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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Description
General part information
IPB110 Series
OptiMOS™P-channel MOSFETs 60V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Documents
Technical documentation and resources