IRF6617TRPBF

Obsolete

Infineon Technologies

TRANS MOSFET N-CH SI 30V 14A 7-PIN DIRECT-FET ST T/R

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH SI 30V 14A 7-PIN DIRECT-FET ST T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6617TRPBF

Current - Continuous Drain (Id) @ 25°C	55 A, 14 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric ST
Power Dissipation (Max)	42 W, 2.1 W
Rds On (Max) @ Id, Vgs	8.1 mOhm
Supplier Device Package	DIRECTFET™ ST
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Infineon Technologies IRF6617TRPBF	20 V	150 °C	-40 °C	8.1 mOhm	N-Channel	2.35 V	4.5 V 10 V	30 V	MOSFET (Metal Oxide)	17 nC	Surface Mount	DirectFET™ Isometric ST	DIRECTFET™ ST	1300 pF	14 A 55 A	2.1 W 42 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

Technical documentation and resources