STB14NM65N

Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB14NM65N

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STB14NM65N	45 nC	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	1300 pF	650 V	Surface Mount	125 W	D2PAK	4 V	150 °C	MOSFET (Metal Oxide)	380 mOhm	12 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 12A (Tc) 125W (Tc) Surface Mount D2PAK

Technical documentation and resources