STD7NS20T4

Obsolete

STMicroelectronics

MOSFET N-CH 200V 7A DPAK

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Obsolete

STMicroelectronics

MOSFET N-CH 200V 7A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD7NS20T4

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STD7NS20T4	7 A	4 V	10 V	Surface Mount	200 V	MOSFET (Metal Oxide)	45 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	540 pF	DPAK	150 °C	N-Channel	20 V	45 nC	400 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 7A (Tc) 45W (Tc) Surface Mount DPAK

Technical documentation and resources