PMDPB85UPE,115

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Nexperia USA Inc.

20 V DUAL P-CHANNEL TRENCH MOSFET

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PMDPB85UPE,115

Active

Nexperia USA Inc.

20 V DUAL P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMDPB85UPE Series

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB85UPE,115

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	2.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	8.1 nC
Input Capacitance (Ciss) (Max)	514 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFDFN Exposed Pad
Package Length	2 mm
Package Name	6-HUSON
Package Width	2 mm
Power - Max	515 mW
Rds On (Max)	103 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	950 mV

PMDPB85UPE Series

Part	Rds On (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Current - Continuous Drain (Id)	Channel Count	Configuration	Configuration - Features	Vgs(th) (Max)	Gate Charge (Max)	Power - Max	FET Feature	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width
Nexperia USA Inc. PMDPB85UPE,115	103 mOhm	20 V	Surface Mount	514 pF	6-UFDFN Exposed Pad	2.9 A	2	P-Channel	Dual	950 mV	8.1 nC	515 mW	Logic Level Gate	MOSFET (Metal Oxide)	-55 °C	150 °C	2 mm	6-HUSON	2 mm