Zenode.ai Logo
Beta
K
TD350ID - 14-SOIC

TD350ID

Obsolete
STMicroelectronics

IC GATE DRVR HIGH-SIDE 14SO

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TD350ID - 14-SOIC

TD350ID

Obsolete
STMicroelectronics

IC GATE DRVR HIGH-SIDE 14SO

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTD350ID
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]1.5 A
Current - Peak Output (Source, Sink) [custom]2.3 A
Driven ConfigurationHigh-Side
Gate TypeN-Channel MOSFET, IGBT
Input TypeNon-Inverting
Logic Voltage - VIL, VIH4.2 V, 0.8 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case14-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ)75 ns
Rise / Fall Time (Typ)130 ns
Supplier Device Package14-SO
Voltage - Supply [Max]26 V
Voltage - Supply [Min]12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TD350E Series

The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.

The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver.

The device includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit conditions. The same delay set in the two-level turn-off feature is applied at turn-on to prevent pulse width distortion.

Documents

Technical documentation and resources