IPB60R090CFD7ATMA1
ObsoleteINFINEON’S 600V COOLMOS™ CFD7 SUPERJUNCTION POWER MOSFET IPB60R090CFD7 IN D²PAK PACKAGE
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IPB60R090CFD7ATMA1
ObsoleteINFINEON’S 600V COOLMOS™ CFD7 SUPERJUNCTION POWER MOSFET IPB60R090CFD7 IN D²PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R090CFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 51 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2103 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 124 W |
| Rds On (Max) @ Id, Vgs | 90 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB60R090 Series
Infineon’s600V CoolMOS™ CFD7Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high powerSMPS, such asserver,telecomandEV chargingstations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Documents
Technical documentation and resources