IPZ60R070P6FKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 53.5A TO247-4

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 53.5A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	IPZ60R070P6FKSA1

Current - Continuous Drain (Id) @ 25°C	53.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4750 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	391 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	PG-TO247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPZ60R070P6FKSA1	20 V	MOSFET (Metal Oxide)	391 W	53.5 A	100 nC	-55 °C	150 °C	TO-247-4	600 V	PG-TO247-4	10 V	70 mOhm	4.5 V	Through Hole	N-Channel	4750 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-4

Technical documentation and resources