BCV48H6327XTSA1

Infineon Technologies

TRANS PNP DARL 60V 0.5A SOT89

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Infineon Technologies

TRANS PNP DARL 60V 0.5A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BCV48H6327XTSA1

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Qualification	AEC-Q101
Supplier Device Package	PG-SOT89
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]	1 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Current - Collector Cutoff (Max) [Max]	Qualification	Grade	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]
Infineon Technologies BCV48H6327XTSA1	100 nA	AEC-Q101	Automotive	PG-SOT89	10000	150 °C	1 V	TO-243AA	500 mA	Surface Mount	PNP - Darlington	200 MHz	60 V	1 W
Infineon Technologies BCV48E6327HTSA1	100 nA			PG-SOT89	10000	150 °C	1 V	TO-243AA	500 mA	Surface Mount	PNP - Darlington	200 MHz	60 V	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP - Darlington 60 V 500 mA 200MHz 1 W Surface Mount PG-SOT89

Technical documentation and resources