IKD06N65ET6ARMA1

Obsolete

Infineon Technologies

IGBT TRENCH FS 650V 9A TO252-3

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Obsolete

Infineon Technologies

IGBT TRENCH FS 650V 9A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKD06N65ET6ARMA1

Current - Collector (Ic) (Max) [Max]	9 A
Gate Charge	13.7 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	31 W
Reverse Recovery Time (trr)	30 ns
Supplier Device Package	PG-TO252-3
Switching Energy	60 µJ, 30 µJ
Test Condition	3 A, 47 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Power - Max [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Switching Energy	Reverse Recovery Time (trr)	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Mounting Type
Infineon Technologies IKD06N65ET6ARMA1	31 W	PG-TO252-3	1.9 V	3 A 15 V 47 Ohm 400 V	Trench Field Stop	-40 C	175 °C	9 A	30 µJ 60 µJ	30 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	13.7 nC	650 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench Field Stop 650 V 9 A 31 W Surface Mount PG-TO252-3

Technical documentation and resources