G05N06S2

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Goford Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

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Goford Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G05N06S2

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1374 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Configuration	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]
Goford Semiconductor G05N06S2	Surface Mount	26 nC	35 mOhm	2 N-Channel	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	5 A	-55 °C	150 °C	1374 pF	2.5 V	60 V	8-SOP	22 nC
Goford Semiconductor G05NP06S2	Surface Mount		36 mOhm 80 mOhm	N and P-Channel	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	5 A	-55 °C	150 °C	1336 pF 1454 pF	2 V 2.2 V	60 V	8-SOP	22 nC	37 nC	3.1 A	1.9 W 2.5 W

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