IRFD220

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Harris Corporation

0.8A 200V 0.800 OHM N-CHANNEL

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Active

Harris Corporation

0.8A 200V 0.800 OHM N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD220

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

0.8A 200V 0.800 OHM N-CHANNEL

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Harris Corporation IRFD220	800 mA	20 V	260 pF	14 nC	4 V	N-Channel	MOSFET (Metal Oxide)	200 V	Through Hole	1 W	-55 °C	150 °C	4-DIP (0.300", 7.62mm)	800 mOhm	4-DIP, Hexdip, HVMDIP	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	579	$ 0.52

General part information

N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Technical documentation and resources

No documents available