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STPSC20G12WL - STMICROELECTRONICS STPSC20H12WL

STPSC20G12WL

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 103 NC, DO-247LL

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STPSC20G12WL - STMICROELECTRONICS STPSC20H12WL

STPSC20G12WL

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 103 NC, DO-247LL

Deep-Dive with AI

Documents+11

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.48
30$ 5.97
120$ 5.53
NewarkEach 1$ 12.99
10$ 9.56
25$ 9.30
50$ 9.05
100$ 8.79
250$ 8.74

Description

General part information

STPSC20 Series

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.