Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC20G12WLY | STPSC20 Series |
|---|---|---|
| Capacitance @ Vr, F | - | 1548 - 1650 pF |
| Current - Average Rectified (Io) (per Diode) | - | 10 - 25 A |
| Current - Reverse Leakage @ Vr | 150 µA | 60 - 150 µA |
| Diode Configuration | - | 1 Pair Common Cathode |
| Grade | Automotive | Automotive |
| Mounting Type | Through Hole | Surface Mount, Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C | -55 - -40 °C |
| Package / Case | TO-247-2 | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-247-2, TO-247-3, TO-220-3 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Reverse Recovery Time (trr) | - | 0 ns |
| Speed | 200 mA, 500 ns | 200 - 500 mA |
| Speed | - | No Recovery Time |
| Supplier Device Package | DO-247 LL | D2PAK HV, DO-247 LL, TO-247-3, TO-220, D2PAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV | 1.2 - 650 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V | 1.5 - 1.75 V |
STPSC20 Series
Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode
| Part | Technology | Mounting Type | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Supplier Device Package | Speed | Qualification | Speed | Grade | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC20H12G2-TR | SiC (Silicon Carbide) Schottky | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | -40 °C | 175 ░C | 120 µA | 1650 pF | 1.5 V | 1.2 kV | 0 ns | D2PAK HV | No Recovery Time | |||||
STMicroelectronics STPSC20G12WLY | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-2 | -55 C | 175 ░C | 150 µA | 1.5 V | 1.2 kV | DO-247 LL | AEC-Q101 | 200 mA, 500 ns | Automotive | |||||
STMicroelectronics STPSC20H065CWLY | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-3 | -40 °C | 175 ░C | 100 µA | 1.65 V | 650 V | 0 ns | TO-247-3 | No Recovery Time | AEC-Q101 | Automotive | 1 Pair Common Cathode | 10 A | ||
STMicroelectronics STPSC20H065CTY | SiC (Silicon Carbide) Schottky | Through Hole | TO-220-3 | -40 °C | 175 ░C | 100 µA | 1.75 V | 650 V | TO-220 | AEC-Q101 | 200 mA, 500 ns | Automotive | 1 Pair Common Cathode | 10 A | |||
STMicroelectronics STPSC20H12G-TR | SiC (Silicon Carbide) Schottky | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | -40 °C | 175 ░C | 120 µA | 1650 pF | 1.5 V | 1.2 kV | 0 ns | D2PAK | No Recovery Time | |||||
STMicroelectronics STPSC20H12CWL | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-3 | -40 °C | 175 ░C | 60 µA | 1.5 V | 1.2 kV | 0 ns | TO-247-3 | No Recovery Time | 1 Pair Common Cathode | 25 A | ||||
STMicroelectronics STPSC20G12WL | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-2 | -55 C | 175 ░C | 150 µA | 1548 pF | 1.5 V | 1.2 kV | DO-247 LL | 200 mA, 500 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC20 Series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources