IPP230N06L3 G

Obsolete

Infineon Technologies

MOSFET N-CH 60V 30A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 30A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP230N06L3 G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs [Max]	23 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPP230N06L3 G	23 mOhm	60 V	1600 pF	PG-TO220-3	36 W	Through Hole	TO-220-3	-55 °C	175 ░C	10 nC	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	N-Channel	2.2 V	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 30A (Tc) 36W (Tc) Through Hole PG-TO220-3

Technical documentation and resources