Technical Specifications
Parameters and characteristics for this part
| Specification | STP9NK65ZFP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 41 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1145 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 50 | $ 1.36 | |
| 100 | $ 1.12 | |||
| 250 | $ 1.09 | |||
| 500 | $ 0.95 | |||
| 1250 | $ 0.80 | |||
| 2500 | $ 0.76 | |||
| 5000 | $ 0.74 | |||
Description
General part information
STP9NK65ZFP Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources
DS2863
Product SpecificationsAN4337
Application NotesFlyers (5 of 7)
AN2842
Application NotesTN1225
Technical Notes & ArticlesFlyers (5 of 7)
TN1224
Technical Notes & ArticlesFlyers (5 of 7)
AN4250
Application NotesFlyers (5 of 7)
AN2344
Application NotesTN1156
Technical Notes & ArticlesFlyers (5 of 7)
Flyers (5 of 7)
TN1378
Technical Notes & ArticlesUM1575
User ManualsFlyers (5 of 7)
