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BCR133E6433HTMA1 - ONSEMI BAS40LT1G

BCR133E6433HTMA1

Infineon Technologies

BRT TRANS, 1K/10KOHM, SOT-23

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BCR133E6433HTMA1 - ONSEMI BAS40LT1G

BCR133E6433HTMA1

Infineon Technologies

BRT TRANS, 1K/10KOHM, SOT-23

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBCR133E6433HTMA1
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 hFE
Frequency - Transition130 MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]200 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
Supplier Device PackagePG-SOT23
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
Digi-Reel® 1$ 0.36
Tape & Reel (TR) 40000$ 0.05
50000$ 0.04
100000$ 0.04
250000$ 0.04
NewarkEach (Supplied on Cut Tape) 1$ 0.25

Description

General part information

BCR133 Series

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 130 MHz 200 mW Surface Mount PG-SOT23

Documents

Technical documentation and resources