TK20A60W5,S5VX
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.175 Ω@10V, TO-220SIS, DTMOSⅣ
TK20A60W5,S5VX
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.175 Ω@10V, TO-220SIS, DTMOSⅣ
Description
General part information
TK20A60 Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-220SIS, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK20A60W5,S5VX |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 55 nC |
| Input Capacitance (Ciss) (Max) | 1800 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) | 175 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Maximum Ratings: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Resonant Circuits and Soft Switching
Derating of the MOSFET Safe Operating Area
Hints and Tips for Thermal Design part3
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
RC Snubbers for Step-Down Converters
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Avalanche energy calculation
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
MOSFET SPICE model grade
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Simplified CFD Model Application Note
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
TK20A60W5 Data sheet/Japanese
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
