Specification	SIHFR9014-GE3

Current - Continuous Drain (Id) (Tc)	5.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	270 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	2.5 W, 25 W
Rds On (Max)	500 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIHFR Series

Part	FET Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Package / Case	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Vishay Dale SIHFR9014-GE3	P-Channel	12 nC	-55 °C	150 °C	4 V	TO-252AA	5.1 A	MOSFET (Metal Oxide)	500 mOhm	10 V	270 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	20 V	60 V	2.5 W 25 W

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