STU8N65M5

Active

STMicroelectronics

MOSFET N-CH 650V 7A IPAK

Search across all available documentation for this part.

Active

STMicroelectronics

MOSFET N-CH 650V 7A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU8N65M5

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	690 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 650V 7A IPAK

Part	Package / Case	Mounting Type	Operating Temperature	FET Type	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
STMicroelectronics STU8N65M5	IPAK, TO-251-3 Short Leads, TO-251AA	Through Hole	150 °C	N-Channel	25 V	MOSFET (Metal Oxide)	5 V	TO-251 (IPAK)	600 mOhm	70 W	10 V	7 A	690 pF	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 7A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources