Zenode.ai Logo
Beta
⌘K
Log InSign Up
STGF30H65DFB2 - TO-220FP

STGF30H65DFB2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB2 SERIES IGBT IN A TO-220FP PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTN1224DS13256+13
STGF30H65DFB2 - TO-220FP

STGF30H65DFB2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB2 SERIES IGBT IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsTN1224DS13256+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGF30H65DFB2
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)90 A
Gate Charge90 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]50 W
Reverse Recovery Time (trr)115 ns
Supplier Device PackageTO-220FP
Switching Energy310 µJ, 270 µJ
Td (on/off) @ 25°C71 ns, 18.4 ns
Test Condition15 V, 6.8 Ohm, 30 A, 400 V
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1000$ 0.95
NewarkEach 1$ 1.66

Description

General part information

STGF30H65DFB2 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.