STGF30H65DFB2
ObsoleteTRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB2 SERIES IGBT IN A TO-220FP PACKAGE
STGF30H65DFB2
ObsoleteTRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB2 SERIES IGBT IN A TO-220FP PACKAGE
Description
General part information
STGF30H65DFB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF30H65DFB2 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 90 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220FP |
| Power - Max | 50 VA |
| Reverse Recovery Time (trr) | 115 ns |
| Switching Energy (Off) | 310 µJ |
| Switching Energy (On) | 270 µJ |
| Td (off) @ 25°C | 71 ns |
| Td (on) @ 25°C | 18.4 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 6.8 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
3D models and CAD resources for this part