BSZ025N04LSATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 PACKAGE; 2.5 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

BSZ025N04LSATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 PACKAGE; 2.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ025N04LSATMA1

Current - Continuous Drain (Id) @ 25°C	22 A, 40 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	69 W, 2.1 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSZ025 Series

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Technology
Infineon Technologies BSZ025N04LSATMA1	N-Channel	3680 pF	40 V	8-PowerTDFN	4.5 V 10 V	20 V	22 A 40 A	2.1 W 69 W	52 nC	-55 °C	150 °C	Surface Mount	2 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.02
		10	$ 1.29
		100	$ 0.88
		500	$ 0.70
		1000	$ 0.64
		2000	$ 0.59
	Digi-Reel®	1	$ 2.02
		10	$ 1.29
		100	$ 0.88
		500	$ 0.70
		1000	$ 0.64
		2000	$ 0.59
	Tape & Reel (TR)	5000	$ 0.55
Newark	Each (Supplied on Full Reel)	5000	$ 0.61

Description

General part information

BSZ025 Series

Infineon's 40V and 60V product families feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.

Documents

Technical documentation and resources