2SC2235-O,F(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.8A TO92MOD

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2SC2235-O,F(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.8A TO92MOD

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2235-O,F(J

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

2SC2235 Series

Part	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage 2SC2235-Y,F(J	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6CN,A,F	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6OMI,FM	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-O,F(J	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6ND,AF	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6CANOFM	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6KMATFM	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(DNSO,AF)	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(6MBH1,AF	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y,T6USNF(M	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2SC2235 Series

Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD

Documents

Technical documentation and resources