DMTH4014SPSW-13

Active

Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMTH4014SPSW-13

Active

Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH4014SPSW-13

Current - Continuous Drain (Id) @ 25°C	43.5 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.6 nC
Input Capacitance (Ciss) (Max) @ Vds	805 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	46.9 W, 4 W
Rds On (Max) @ Id, Vgs	14.8 mOhm
Supplier Device Package	PowerDI5060-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMTH4014SPSW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMTH4014SPSW-13	10 V	-55 °C	175 ░C	14.8 mOhm	8-PowerTDFN	4 V	MOSFET (Metal Oxide)	10.6 nC	4 W 46.9 W	N-Channel	40 V	20 V	Surface Mount Wettable Flank	805 pF	PowerDI5060-8 (Type UX)	43.5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.20
		5000	$ 0.19
		12500	$ 0.18
		25000	$ 0.18

Description

General part information

DMTH4014SPSW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.