CUS15I30A(TE85L,QM

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CUS15I30A(TE85L,QM

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOD-323, SC-76
Speed	200 mA, 500 ns
Supplier Device Package	US-FLAT (1.25x2.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	460 mV

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction	Mounting Type
Toshiba Semiconductor and Storage CUS15I30A(TE85L,QM	60 µA	50 pF	200 mA 500 ns	Schottky	30 V	1.5 A	US-FLAT (1.25x2.5)	SC-76 SOD-323	460 mV	150 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 1.5A Surface Mount US-FLAT (1.25x2.5)

Technical documentation and resources

No documents available