TK20V60W5,LVQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A 4DFN

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A 4DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TK20V60W5,LVQ

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	4-VSFN Exposed Pad
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	4-DFN-EP (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK20V60W5,LVQ	MOSFET (Metal Oxide)	1800 pF	4.5 V	55 nC	Surface Mount	156 W	20 A	N-Channel	600 V	150 °C	190 mOhm	10 V	4-VSFN Exposed Pad	30 V	4-DFN-EP (8x8)
Toshiba Semiconductor and Storage TK20V60W,LVQ	MOSFET (Metal Oxide)	1680 pF	3.7 V		Surface Mount	156 W	20 A	N-Channel	600 V	150 °C	170 mOhm	10 V	4-VSFN Exposed Pad	30 V	4-DFN-EP (8x8)	48 nC

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General part information

N-Channel 600 V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8)

Technical documentation and resources