
S70GL02GS12FHIV20
ActiveFLASH MEMORY, PARALLEL NOR, 2 GBIT, 256M X 8BIT, CFI, PARALLEL, FBGA, 64 PINS
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S70GL02GS12FHIV20
ActiveFLASH MEMORY, PARALLEL NOR, 2 GBIT, 256M X 8BIT, CFI, PARALLEL, FBGA, 64 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | S70GL02GS12FHIV20 |
|---|---|
| Access Time | 120 ns |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Memory Organization | 128 M |
| Memory Size | 2 Gbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
| Technology | FLASH - NOR |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 1.65 V |
S70GL02 Series
| Part | Access Time | Memory Organization | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Type | Memory Format | Supplier Device Package | Memory Interface | Memory Size | Mounting Type | Package / Case | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 120 ns | 128 M x 16 256 M x 8 | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | Parallel | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR | 105 °C | -40 °C | |
Infineon Technologies | 110 ns | 128 M x 16 256 M x 8 | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | Parallel | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR | 105 °C | -40 °C | |
Infineon Technologies | 120 ns | 128 M | 1.65 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | Parallel | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR | 85 °C | -40 °C | |
Infineon Technologies | 110 ns | 128 M x 16 256 M x 8 | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (11x13) | Parallel | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR | 105 °C | -40 °C | |
Infineon Technologies | 120 ns | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | CFI | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR (SLC) | 105 °C | -40 °C | 256M x 8 | |
Infineon Technologies | 120 ns | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | CFI | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR (SLC) | 105 °C | -40 °C | 256M x 8 | |
Infineon Technologies | 120 ns | 128 M x 16 256 M x 8 | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | Parallel | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR | 105 °C | -40 °C | |
Infineon Technologies | 110 ns | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | CFI | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR (SLC) | 105 °C | -40 °C | 256M x 8 | |
Infineon Technologies | 110 ns | 2.7 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | CFI | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR (SLC) | 85 °C | -40 °C | 256M x 8 | |
Infineon Technologies | 120 ns | 128 M | 1.65 V | 3.6 V | Non-Volatile | FLASH | 64-FBGA (13x11) | Parallel | 2 Gbit | Surface Mount | 64-LBGA | FLASH - NOR | 85 °C | -40 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
S70GL02 Series
S70GL02GS12FHIV20 is a 2-Gigabit MirrorBit® flash memory device. It is fabricated using 65nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 120ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single-byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance, and lower power consumption.
Documents
Technical documentation and resources