TDB6HK180N16RRPB11BPSA1

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Infineon Technologies

TRANS IGBT MODULE N-CH 1200V 140A 515W 29-PIN

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Infineon Technologies

TRANS IGBT MODULE N-CH 1200V 140A 515W 29-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	TDB6HK180N16RRPB11BPSA1

Current - Gate Trigger (Igt) (Max) [Max] [x]	100 mA
Current - Hold (Ih) (Max) [Max]	220 mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	1600 A
Mounting Type	Chassis Mount
Number of SCRs, Diodes	3 Diodes
Operating Temperature	175 °C
Package / Case	Module
Structure	Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Voltage - Gate Trigger (Vgt) (Max) [Max]	2 V
Voltage - Off State	1.6 kV

Part	Operating Temperature	Current - Hold (Ih) (Max) [Max]	Structure	Number of SCRs, Diodes	Current - Non Rep. Surge 50, 60Hz (Itsm)	Current - Gate Trigger (Igt) (Max) [Max] [x]	Voltage - Off State	Package / Case	Voltage - Gate Trigger (Vgt) (Max) [Max]	Mounting Type
Infineon Technologies TDB6HK180N16RRPB11BPSA1	175 °C	220 mA	Bridge 3-Phase - SCRs/Diodes - IGBT with Diode	3 Diodes	1600 A	100 mA	1.6 kV	Module	2 V	Chassis Mount
Infineon Technologies TDB6HK180N16RRB11BPSA1	175 °C	220 mA	Bridge 3-Phase - SCRs/Diodes - IGBT with Diode	3 Diodes	1600 A	100 mA	1.6 kV	Module	2 V	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2	$ 176.96

General part information

SCR Module 1.6 kV Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Chassis Mount Module

Technical documentation and resources