DPG60IM400QB

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IXYS

DIODE GEN PURP 400V 60A TO3P

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IXYS

DIODE GEN PURP 400V 60A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	DPG60IM400QB

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-65-3, TO-3P-3
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3P
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.47 V

Part	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
IXYS DPG60IM400QB	200 mA 500 ns	45 ns	SC-65-3 TO-3P-3	1 µA	Standard	60 A	400 V	TO-3P	Through Hole	1.47 V	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 4.66

General part information

Diode 400 V 60A Through Hole TO-3P

Technical documentation and resources