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IRLML2803TRPBF - SOT-23-3

IRLML2803TRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 850 MA, 0.3 OHM, SOT-23, SURFACE MOUNT

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IRLML2803TRPBF - SOT-23-3

IRLML2803TRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 850 MA, 0.3 OHM, SOT-23, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLML2803TRPBF
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]5 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]540 mW
Rds On (Max) @ Id, Vgs250 mOhm
Supplier Device PackageMicro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.28
100$ 0.17
500$ 0.13
1000$ 0.12
Digi-Reel® 1$ 0.45
10$ 0.28
100$ 0.17
500$ 0.13
1000$ 0.12
Tape & Reel (TR) 3000$ 0.10
6000$ 0.09
9000$ 0.08
15000$ 0.08
21000$ 0.08
30000$ 0.07
75000$ 0.07

Description

General part information

IRLML2803 Series

The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.