STI33N60M6
ObsoleteSTMicroelectronics
MOSFET N-CH 600V 25A I2PAK
STI33N60M6
ObsoleteSTMicroelectronics
MOSFET N-CH 600V 25A I2PAK
Description
General part information
STI33 Series
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | STI33N60M6 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 25 A, 25 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 33.4 nC |
| Input Capacitance (Ciss) (Max) | 1515 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | TO-262 (I2PAK) |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) | 125 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4.75 V |
Pricing
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