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STI21N65M5 - TO-262-3 Long Leads

STI21N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.150 OHM TYP., 17 A MDMESH M5 POWER MOSFET IN I2PAK PACKAGE

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DocumentsDatasheet+17
STI21N65M5 - TO-262-3 Long Leads

STI21N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.150 OHM TYP., 17 A MDMESH M5 POWER MOSFET IN I2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTI21N65M5
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
Input Capacitance (Ciss) (Max) @ Vds1950 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs179 mOhm
Supplier Device PackageI2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 2.11

Description

General part information

STI21N65M5 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.