IXFB100N50Q3

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IXYS

MOSFET N-CH 500V 100A PLUS264

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IXYS

MOSFET N-CH 500V 100A PLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB100N50Q3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	255 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1560 W
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Package / Case	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
IXYS IXFB100N50Q3	TO-264-3 TO-264AA	30 V	Through Hole	10 V	MOSFET (Metal Oxide)	PLUS264™	500 V	255 nC	6.5 V	N-Channel	-55 °C	150 °C	100 A	1560 W	49 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 100A (Tc) 1560W (Tc) Through Hole PLUS264™

Technical documentation and resources

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