SCT4045DEHRC11
ActiveRohm Semiconductor
750V, 34A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
SCT4045DEHRC11
ActiveRohm Semiconductor
750V, 34A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
Description
General part information
SCT4045DEHR Series
AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4045DEHRC11 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 34 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 63 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1460 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247N |
| Power Dissipation (Max) | 115 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 59 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -4 V |
| Vgs (Max) Positive | 21 V |
| Vgs(th) (Max) | 4.8 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Importance of Probe Calibration When Measuring Power: Deskew
Oscillation countermeasures for MOSFETs in parallel
Notes for Calculating Power Consumption:Static Operation
Judgment Criteria of Thermal Evaluation
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!
How to Use LTspice® Models: Tips for Improving Convergence
What Is Thermal Design
Anti-Whisker formation
How to Use LTspice® Models
How to Use PLECS Models
5kW Inverter Circuit Using 4th Generation SiC MOSFETs
Best practices for the connection of Driver Source/Emitter terminals in discrete devices
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note
How to Use PSIM Models
Impedance Characteristics of Bypass Capacitor
Basics of Thermal Resistance and Heat Dissipation
5kW High-Efficiency Fan-less Inverter
Two-Resistor Model for Thermal Simulation
Gate-source voltage behaviour in a bridge configuration
Precautions for Thermal Resistance of Insulation Sheet
Condition of Soldering
Types and Features of Transistors
Application Note for SiC Power Devices and Modules
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
What is a Thermal Model? (SiC Power Device)
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
SiC MOSFET Layout Design Considerations
How to Use Thermal Models
Notes for Temperature Measurement Using Thermocouples
Calculating Power Loss from Measured Waveforms
Calculation of Power Dissipation in Switching Circuit
How to measure the oscillation occurs between parallel-connected devices
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Compliance of the ELV directive
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Taping Information
About Export Administration Regulations (EAR)
Precautions during gate-source voltage measurement for SiC MOSFET
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Design Method for Comparator-less Miller Clamp Circuits
Thermal Resistance Measurement Method for SiC MOSFET
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Measurement Method and Usage of Thermal Resistance RthJC
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
PCB Layout Thermal Design Guide
θ<sub>JA</sub> and Ψ<sub>JT</sub>
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Basics and Design Guidelines for Gate Drive Circuits
Gate-Source Voltage Surge Suppression Methods
Solving the challenges of driving SiC MOSFETs with new packaging developments
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Explanation for Marking - TO-247N SiC_Marking-e.pdf
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
Part Explanation
Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
About Flammability of Materials
How to Suppress the Parallel Drive Oscillation in SiC Modules
Method for Monitoring Switching Waveform
Notes for Temperature Measurement Using Forward Voltage of PN Junction
4 Steps for Successful Thermal Designing of Power Devices
Package Dimensions