BSS87H6327XTSA1

Infineon Technologies

MOSFET N-CH 240V 260MA SOT89-4

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Infineon Technologies

MOSFET N-CH 240V 260MA SOT89-4

Technical Specifications

Parameters and characteristics for this part

Specification	BSS87H6327XTSA1

Current - Continuous Drain (Id) @ 25°C	260 mA
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds	97 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	6 Ohm
Supplier Device Package	PG-SOT89-4-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Package / Case	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies BSS87H6327XTSA1	TO-243AA	20 V	PG-SOT89-4-2	1.8 V	N-Channel	240 V	5.5 nC	1 W	MOSFET (Metal Oxide)	Surface Mount	97 pF	6 Ohm	260 mA	4.5 V 10 V	-55 °C	150 °C

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General part information

N-Channel 240 V 260mA (Ta) 1W (Ta) Surface Mount PG-SOT89-4-2

Technical documentation and resources