IPP08CN10N G

Obsolete

Infineon Technologies

MOSFET N-CH 100V 95A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 95A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP08CN10N G

Current - Continuous Drain (Id) @ 25°C	95 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)
Infineon Technologies IPP08CN10N G	PG-TO220-3	-55 °C	175 ░C	TO-220-3	100 nC	N-Channel	100 V	10 V	6660 pF	8.5 mOhm	167 W	Through Hole	MOSFET (Metal Oxide)	95 A	4 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 95A (Tc) 167W (Tc) Through Hole PG-TO220-3

Technical documentation and resources