BCR112WE6327BTSA1

Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V SOT323

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Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V SOT323

Technical Specifications

Parameters and characteristics for this part

Specification	BCR112WE6327BTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	250 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	PG-SOT323
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Frequency - Transition	Power - Max [Max]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Mounting Type	Package / Case
Infineon Technologies BCR112WH6327XTSA1	50 V	NPN - Pre-Biased	140 MHz	250 mW	4700 Ohms	100 nA	300 mV	PG-SOT323	100 mA	4.7 kOhms	Surface Mount	SC-70 SOT-323
Infineon Technologies BCR112WE6327BTSA1	50 V	NPN - Pre-Biased	140 MHz	250 mW	4700 Ohms	100 nA	300 mV	PG-SOT323	100 mA	4.7 kOhms	Surface Mount	SC-70 SOT-323

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 140 MHz 250 mW Surface Mount PG-SOT323

Technical documentation and resources