MJD41CQ-13

Active

Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Search across all available documentation for this part.

Active

Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Technical Specifications

Parameters and characteristics for this part

Specification	MJD41CQ-13

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.5 W
Qualification	AEC-Q101
Supplier Device Package	TO-252 (DPAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN, 100V, 6A, TO252

Part	Mounting Type	Qualification	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Package / Case	Supplier Device Package	Grade	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc MJD41CQ-13	Surface Mount	AEC-Q101	NPN	100 V	1.5 V	1 µA	1.5 W	30 hFE	3 MHz	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	Automotive	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly