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APTGT200DH120G

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Microchip Technology

1200V/ASYMMETRICAL BRIDGE/IGBT MODULES

APTGT200DH120G

Active
Microchip Technology

1200V/ASYMMETRICAL BRIDGE/IGBT MODULES

Description

General part information

APTGT200 Series

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Technical Specifications

Parameters and characteristics for this part

SpecificationAPTGT200DH120G
ConfigurationAsymmetrical Bridge
Current - Collector (Ic) (Max)280 A
Current - Collector Cutoff (Max)350 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce14 nF
Mounting TypeChassis Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSP6
Package NameSP6
Power - Max890 W
Vce(on) (Max)2.1 V
Voltage - Collector Emitter Breakdown (Max)1200 V

Pricing

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CAD

3D models and CAD resources for this part