Zenode.ai Logo
Beta
⌘K
Log InSign Up
STD8NM50N - DPAK

STD8NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.73 OHM, 5 A MDMESH(TM) II POWER MOSFET IN DPAK

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet+18
STD8NM50N - DPAK

STD8NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.73 OHM, 5 A MDMESH(TM) II POWER MOSFET IN DPAK

Deep-Dive with AI

DocumentsDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD8NM50N
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds364 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs790 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.98
10$ 1.93
100$ 1.33
500$ 1.11
1000$ 1.03
Digi-Reel® 1$ 2.98
10$ 1.93
100$ 1.33
500$ 1.11
1000$ 1.03
Tape & Reel (TR) 2500$ 0.91
5000$ 0.91

Description

General part information

STD8NM50N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.