STN2NF10

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STMicroelectronics

TRANS MOSFET N-CH 100V 2.4A 4-PIN(3+TAB) SOT-223 T/R

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STN2NF10

Active

STMicroelectronics

TRANS MOSFET N-CH 100V 2.4A 4-PIN(3+TAB) SOT-223 T/R

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STN2NF10

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.3 W
Rds On (Max) @ Id, Vgs	260 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STN2NF10 Series

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package
STMicroelectronics STN2NF10	280 pF	100 V	N-Channel	2.4 A	10 V	MOSFET (Metal Oxide)	14 nC	Surface Mount	-55 °C	150 °C	260 mOhm	20 V	TO-261-4 TO-261AA	4 V	3.3 W	SOT-223

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.02
		10	$ 0.83
		100	$ 0.65
		500	$ 0.55
		1000	$ 0.45
		2000	$ 0.42
	Digi-Reel®	1	$ 1.02
		10	$ 0.83
		100	$ 0.65
		500	$ 0.55
		1000	$ 0.45
		2000	$ 0.42
	Tape & Reel (TR)	4000	$ 0.42
		8000	$ 0.40
		12000	$ 0.38
Newark	Each (Supplied on Full Reel)	4000	$ 0.49
		8000	$ 0.48
		16000	$ 0.48

Description

General part information

STN2NF10 Series

This Power MOSFET is the latest development of STMicroelectronics unique "single feature size"" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alig"

Documents

Technical documentation and resources