IXTP270N04T4

Obsolete

IXYS

MOSFET N-CH 40V 270A TO220AB

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Obsolete

IXYS

MOSFET N-CH 40V 270A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP270N04T4

Current - Continuous Drain (Id) @ 25°C	270 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	182 nC
Input Capacitance (Ciss) (Max) @ Vds	9140 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Drain to Source Voltage (Vdss)
IXYS IXTP270N04T4	9140 pF	182 nC	10 V	4 V	TO-220-3	270 A	15 V	TO-220-3	375 W	-55 °C	175 ░C	N-Channel	2.4 mOhm	MOSFET (Metal Oxide)	Through Hole	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 270A (Tc) 375W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available