STD120N4F6

Obsolete

STMicroelectronics

POWER MOSFET, N CHANNEL, 40 V, 80 A, 0.004 OHM, TO-252 (DPAK), SURFACE MOUNT

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Alpha

STD120N4F6

Obsolete

STMicroelectronics

POWER MOSFET, N CHANNEL, 40 V, 80 A, 0.004 OHM, TO-252 (DPAK), SURFACE MOUNT

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

STD120N4F6 Series

These devices are N-channel Power MOSFETs developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.

Technical Specifications

Parameters and characteristics for this part

Specification	STD120N4F6

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	65 nC, 65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3850 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	110 W
Qualification	AEC-Q101
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

STD120N4F6 Series

N-channel 40 V, 3.5 mOhm, 80 A STripFET F6 Power MOSFET in DPAK package

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Technology	Qualification	Grade	Package / Case	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	FET Type	Vgs (Max)
STMicroelectronics STD120N4F6	-55 °C	175 °C	DPak	MOSFET (Metal Oxide)	AEC-Q101	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 nC 65 nC	110 W	80 A	4 V	Surface Mount	4 mOhm	10 V	40 V	3850 pF	N-Channel	20 V