Specification	SIRA10BDP-T1-GE3

Current - Continuous Drain (Id) (Ta)	30 A
Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	36.2 nC
Input Capacitance (Ciss) (Max)	1710 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 43 W
Rds On (Max)	3.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIRA10 Series

Part	Vgs (Max) Negative	Vgs (Max) Positive	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Package Name	Vgs(th) (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)
Vishay Dale SIRA10BDP-T1-GE3	-16 V	20 V	10 V	4.5 V	N-Channel	Surface Mount	1710 pF	PowerPAK® SO-8	PowerPAK® SO-8	2.4 V	5 W 43 W	-55 °C	150 °C	MOSFET (Metal Oxide)	30 A	60 A	3.6 mOhm	30 V	36.2 nC

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