
ZVN4210A
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.45A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Deep-Dive with AI
Search across all available documentation for this part.

ZVN4210A
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.45A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZVN4210A |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 450 mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | TO-92 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
ZVN4210G Series
N-Channel Enhancement Mode Vertical DMOS FET
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 800 mA | 2.4 V | 1.5 Ohm | Surface Mount | 100 pF | MOSFET (Metal Oxide) | -55 °C | 150 °C | SOT-223-3 | 2 W | 100 V | TO-261-4 TO-261AA | 10 V | 5 V | 20 V | |
Diodes Inc | N-Channel | 450 mA | 2.4 V | 1.5 Ohm | Through Hole | 100 pF | MOSFET (Metal Oxide) | -55 °C | 150 °C | TO-92 | 100 V | TO-226-3 TO-92-3 | 10 V | 5 V | 20 V | 700 mW | |
Diodes Inc | N-Channel | 450 mA | 2.4 V | 1.5 Ohm | Through Hole | 100 pF | MOSFET (Metal Oxide) | -55 °C | 150 °C | E-Line (TO-92 compatible) | 100 V | E-Line-3 | 10 V | 5 V | 20 V | 700 mW |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ZVN4210G Series
N-Channel Enhancement Mode Vertical DMOS FET
Documents
Technical documentation and resources