Specification	STW11NB80

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	70 nC
Input Capacitance (Ciss) (Max)	2900 pF, 2900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	190 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STW11N Series

Part	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package Name	Technology	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)
STMicroelectronics STW11NB80	30 V	Through Hole	800 V	TO-247-3	MOSFET (Metal Oxide)	TO-247-3	190 W	11 A	150 °C	10 V	800 mOhm	70 nC	5 V	N-Channel	2900 pF 2900 pF

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