APT25GR120BSCD10

Obsolete

Microsemi Corporation

IGBT 1200V 75A 521W TO247

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

IGBT 1200V 75A 521W TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT25GR120BSCD10

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	203 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	521 W
Supplier Device Package	TO-247
Switching Energy	434 µJ, 466 µJ
Td (on/off) @ 25°C	16 ns
Td (on/off) @ 25°C	122 ns
Test Condition	15 V, 25 A, 4.3 Ohm, 600 V
Vce(on) (Max) @ Vge, Ic	3.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Switching Energy	IGBT Type	Gate Charge
Microsemi Corporation APT25GR120BSCD10	3.2 V	1200 V	Through Hole	75 A	16 ns	122 ns	521 W	TO-247	TO-247-3	100 A	-55 °C	150 °C	4.3 Ohm 15 V 25 A 600 V	434 µJ 466 µJ	NPT	203 nC
Microsemi Corporation APT25GR120SSCD10	3.2 V	1200 V	Surface Mount	75 A	16 ns	122 ns	521 W	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	100 A	-55 °C	150 °C	4.3 Ohm 15 V 25 A 600 V	434 µJ 466 µJ	NPT	203 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 75 A 521 W Through Hole TO-247

Technical documentation and resources