STPSC8065D
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 28 NC, TO-220AC
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STPSC8065D
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 28 NC, TO-220AC
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC8065D |
|---|---|
| Capacitance @ Vr, F | 540 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 105 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 8 A, 1.45 V |
Pricing
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Description
General part information
STPSC8065 Series
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
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Technical documentation and resources